Products
Among numerous ceramic substrate materials, silicon nitride (Si3N4) stands out due to its exceptional properties. Compared to other materials such as BeO, SiC, Al2O3, and AlN, silicon nitride ceramic substrates demonstrate unique advantages. While BeO boasts outstanding thermal conductivity, its toxicity limits its application. SiC offers good stability but is unsuitable for high-voltage environments.
Al2O3 is technologically mature but has relatively low thermal conductivity, and AlN suffers from issues such as susceptibility to hydrolysis and insufficient strength and toughness.
KEY PROPERTIES:
Silicon nitride ceramic substrates, with their high thermal conductivity, low dielectric constant, non-toxicity, and thermal expansion coefficient that matches single-crystal silicon, have become the preferred choice for high thermal conductivity ceramic substrates. The crystal thermal conductivity of silicon nitride can reach up to 320 W·(m·K)^(-1), significantly enhancing the heat dissipation efficiency of power devices. Additionally, its excellent mechanical properties, such as high strength and toughness, ensure high reliability even in complex environments. These characteristics make silicon nitride ceramic substrates highly sought after in industries such as new energy vehicles, 5G communications, and high-power electronic devices, indicating a broad market prospect.
APPLICATIONS:
Electronics and Semiconductors: Used as substrates for power electronics, sensors, and insulating layers due to their electrical insulation and thermal conductivity.
Industrial Components: Employed in bearings, cutting tools, and engine parts where high wear resistance and thermal stability are required.
Medical Devices: Utilized in biomedical implants and surgical instruments because of their bio-compatibility and strength.
Aerospace: Applied in components exposed to extreme temperatures and mechanical stress, such as turbine blades and engine parts.
Tech Data | ||||
Test Material | Si3N4 Substrate | |||
Color | Grey | |||
Density | 3.2 | |||
Thermal conductivity | Hot Disk (TPS) | W/mK | 85W | |
Surface roughnessRA | um | 0.4 | ||
Grain size | D50 | um | 0.455 | |
Physical properties | Flexural strength | Three-point bending | mpa | 780 |
Elastic modulus | Gpa | 310 | ||
Vickers hardness | Gpa | 15 | ||
Fracture toughness | IF | Mpa. √m | 6.5 | |
Thermal properties | Linear expansion coeff.(10 -6K-1) | 40-400 | 10-6/K | 2.6 |
40-800 | 3 | |||
Specific Heat | 25℃ | J/(kg.k) | 680 | |
Electrical Characteristics | Dielectric constant | 9.32 | ||
Dielectric loss | 10-4 | 2.21 | ||
Volume resistance | Ω.m | >1012 | ||
Breakdown voltage | KV/MM | >20.4 |