Silicon nitride substrates

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KEY PROPERTIES:

Silicon nitride ceramic substrates, with their high thermal conductivity, low dielectric constant, non-toxicity, and thermal expansion coefficient that matches single-crystal silicon, have become the preferred choice for high thermal conductivity ceramic substrates. The crystal thermal conductivity of silicon nitride can reach up to 320 W·(m·K)^(-1), significantly enhancing the heat dissipation efficiency of power devices. Additionally, its excellent mechanical properties, such as high strength and toughness, ensure high reliability even in complex environments. These characteristics make silicon nitride ceramic substrates highly sought after in industries such as new energy vehicles, 5G communications, and high-power electronic devices, indicating a broad market prospect.


APPLICATIONS:

Electronics and Semiconductors: Used as substrates for power electronics, sensors, and insulating layers due to their electrical insulation and thermal conductivity.

Industrial Components: Employed in bearings, cutting tools, and engine parts where high wear resistance and thermal stability are required.

Medical Devices: Utilized in biomedical implants and surgical instruments because of their bio-compatibility and strength.

Aerospace: Applied in components exposed to extreme temperatures and mechanical stress, such as turbine blades and engine parts.


Tech Data
Test MaterialSi3N4 Substrate
Color
Grey
Density
3.2 
Thermal conductivityHot Disk
(TPS)
W/mK85W
Surface roughnessRA
um0.4 
Grain sizeD50um0.455 
Physical propertiesFlexural strengthThree-point bendingmpa780 
Elastic modulus
Gpa310 
Vickers hardness
Gpa15 
Fracture toughnessIFMpa. √m6.5 
Thermal propertiesLinear expansion coeff.(10
-6K-1)
40-40010-6/K2.6
40-800
Specific Heat25℃J/(kg.k)680 
Electrical CharacteristicsDielectric constant

9.32 
Dielectric loss
10-42.21 
Volume resistance
Ω.m>1012
Breakdown voltage
KV/MM>20.4


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